IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver with features such as floating channel, wide gate drive supply range, and undervoltage lockout.
The IR2117(S)/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver utilizing proprietary HVIC and latch immune CMOS technologies. The device features a floating channel designed for bootstrap operation, fully operational up to +600V, and is tolerant to negative transient voltage. It includes a gate drive supply range from 10 to 20V and undervoltage lockout.
| High side floating supply voltage | -0.3 to 625 V |
|---|---|
| High side floating output voltage | VS - 0.3 to VS + 0.3 V |
| Logic supply voltage | -0.3 to 25 V |
| Turn-on propagation delay (typ.) | 125 ns |
| Turn-off propagation delay (typ.) | 105 ns |
| Output high short circuit pulsed current | 200 mA |
| Output low short circuit pulsed current | 420 mA |
| Junction temperature (max.) | 150 °C |
The device is fully operational to +600V, with an absolute maximum rating of 625V.
The gate drive supply range is from 10 to 20V.
The output is in phase with the input for the IR2117 and out of phase with the input for the IR2118.