Key facts
- Manuals
- 163
- Last added
- 2012-08-07
Latest International Rectifier manuals
lnternational IOR Rectifier IRSF3021 handbook
The IRSF3021 Lamp and DC Motor Driver is a fully protected three terminal monolithic SMART POWER MOSFET that features current limiting, over-temperature protection, gate-to-source ESD protection and gate-to-drain clamp for over-voltage protection. The on-chip protection circuit limits the drain current in the on-state. The over-temperature circuitry turns off the POWER MOSFET when the junction temperature exceeds 165°C. The device restarts automatically once it has cooled down below the reset temperature. The IRSF3021 is specifically designed for driving loads that require overload protection and in-rush current control while operating in automotive and industrial environments. Targeted applications include resistive loads such as lamps or capacitive loads such as airbag squibs and DC motor drives.
lnternational IOR Rectifier IRSF3031 handbook
The IRSF3031 is a three-terminal monolithic SMART POWER MOS- FET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset threshold input. The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature ex- ceeds 165°C (typical) and keeps it off until the input is driven below the Reset Threshold voltage. The drain-to-source voltage is actively clamped at 55V (typical) prior to the avalanche of the power MOSFET, thus improving its performance during turn-off with inductive loads. The input requirements are very low (100µA typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs.
lnternational IOR Rectifier IRS20124S(PbF) handbook
The IRS20124 is a 200V high voltage rated digital audio driver that can provide up to 1000W of output power in Class D audio amplifier applications. The device features integrated dead-time generation and bidirectional over current sensing to simplify design. The IRS20124 also features a programmable compensated preset dead-time for improved THD performance over temperature. The device has high noise immunity and features a shutdown function to protect devices from overload conditions. The IRS20124 operates at up to 1MHz and has 3.3V/5V logic compatible inputs.
lnternational IOR Rectifier IR2117(S)/IR2118(S) (PbF) handbook
IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver with features such as floating channel, wide gate drive supply range, and undervoltage lockout.
lnternational IOR Rectifier IR2117 handbook
The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable rugged monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
lnternational IOR Rectifier IR2114SS/ IR21141SS IR2214SS/IR22141SS handbook
IR2114/21141/2214/IR22141 half-bridge gate driver IC is a high performance, high reliability 1200V isolated 600V gate driver in 8-pin SOT-223 package. The driver has floating channel, soft over-current shutdown, synchronization shutdown, integrated desaturation detection circuit, two stage turn on output for di/dt control, separate pull-up/pull-down output drive pins, matched delay outputs and under voltage lockout with hysteresis band.
lnternational IOR Rectifier IR2113L6 handbook
The IR2113L6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
lnternational IOR Rectifier IR2113E6 handbook
The document describes the features and characteristics of the IR2113E6 high voltage, high speed power MOSFET and IGBT driver, including floating channel design, gate drive supply range from 10 to 20V, logic and power ground with ±5V offset, CMOS Schmitt-triggered inputs, etc.
lnternational IOR Rectifier IR2110/IR2113 (S) handbook
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. Logic inputs are com- patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse cur- rent buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
lnternational IOR Rectifier IR2110L4 HIGH AND LOW SIDE DRIVER handbook(2)
The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
lnternational IOR Rectifier IR2110L4 HIGH AND LOW SIDE DRIVER handbook(1)
The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
lnternational IOR Rectifier IR2110L4 HIGH AND LOW SIDE DRIVER datasheet(1)
IR2110E4 is a high-low side driver produced by IR company. Its working voltage range is 10-20V, output voltage range is 10-20V, output current is +/-2A/2A, and delay matching is 10ns.
lnternational IOR Rectifier IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF HIGH AND LOW SIDE DRIVER handbook
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. The product has various features such as a floating channel designed for bootstrap operation, compatibility with standard CMOS or LSTTL output for logic inputs, and matched propagation delay.
lnternational IOR Rectifier IR210SG12HCB handbook(1)
This document describes the main features and characteristics of the IR210SG12HCB model, including the maximum on-state voltage, reverse breakdown voltage, maximum DC gate current required to trigger, and maximum DC gate voltage required to trigger. It also includes information on the mechanical characteristics and dimensions of the product.
lnternational IOR Rectifier IR210SG12HCB datasheet(1)
IR210SG12HCB is a 210 square millimeter thyristor produced by International Rectifier. The rated reverse breakdown voltage of the thyristor is 1200 V, the maximum on-state voltage is 1.5 V, the maximum trigger current is 60 mA, the maximum trigger voltage is 1.9 V, the maximum holding current range is 10 to 125 mA, and the maximum latching current is 200 mA.