This document describes the features and characteristics of the IR210DG..HCB series products.
This document provides technical specifications for the International Rectifier IR210DG..HCB Series high power rectifier diodes. The devices feature a square junction size of 210 mils and a 4-inch wafer size, available in 600V and 1200V classes.
| Junction Size | Square 210 mils |
|---|---|
| Wafer Size | 4" |
| Passivation Process | Glassivated MESA |
| Chip Dimensions | 210x210 mils |
| Wafer Diameter | 100 mm |
| Wafer Thickness | 300um |
The junction size for this series is a square measuring 210 mils.
These high power rectifier diodes are available in 600 and 1200 V classes.
The nominal wafer thickness for this device is 300um.