BSH301 is a dual N-channel enhancement mode MOS transistor with a 40mΩ on-state resistance and RDSon rating down to 1.8V. It is suitable for applications such as Li-Ion safety switch and power management.
This document is a datasheet for the Philips BSH301, a dual N-channel enhancement mode MOS transistor. The device is housed in an 8-pin plastic TSSOP8 package and is designed for applications such as Li-Ion safety switches and power management. It features a low on-state resistance of 40 mQ at 2.5 V gate drive and includes ESD gate protection.
| On-state resistance | 40 mQ |
|---|---|
| Gate drive voltage | 1.8 V |
| Package type | TSSOP8 |
| Drain-source voltage (DC) | 20 V |
| Gate-source voltage (DC) | +8 V |
The device is suitable for Li-Ion safety switches and power management applications.
The transistor is supplied in an 8-pin plastic TSSOP8 package.
Yes, the device features ESD gate protection.