This document describes the specifications and characteristics of the BFT25 product. The BFT25 is an NPN 2 GHz wideband transistor primarily used in RF low power amplifiers. It features low power consumption, excellent wideband properties, and low noise.
The Philips BFT25 is an NPN transistor in a plastic SOT23 package, primarily intended for use in RF low power amplifiers such as those found in pocket phones and paging systems. It features low current consumption and excellent wideband properties with low noise up to high frequencies.
| Transition frequency | 2.3 GHz |
|---|---|
| Collector-base voltage | 8 V |
| Collector-emitter voltage | 5 V |
| DC collector current | 6.5 mA |
| Total power dissipation | 30 mW |
| Feedback capacitance | 0.45 pF |
| Maximum unilateral power gain | 18 dB |
| Noise figure | 3.8 dB |
| Package type | SOT23 |
The maximum DC collector current is 6.5 mA.
The transition frequency is 2.3 GHz.