The BSH206 is a P-channel enhancement mode MOS transistor with features such as low threshold voltage, fast switching, and logic level compatibility. It is suitable for battery-powered applications and high-speed digital interfacing.
This document is a product specification datasheet for the Philips BSH206, a P-channel enhancement mode MOS transistor designed for battery-powered applications and high-speed digital interfacing. The device features a very low threshold voltage and fast switching capabilities.
The datasheet provides comprehensive technical data including limiting values, electrical characteristics such as drain-source breakdown voltage and on-state resistance, and reverse diode parameters. It also includes graphical representations of power dissipation, safe operating areas, and capacitance curves.
| Drain-source voltage (Max) | -12 V |
|---|---|
| Drain current (DC) at 25°C | -0.75 A |
| Total power dissipation at 25°C | 0.417 W |
| Storage & operating temperature range | -55 to 150 °C |