BSH299 is a P-channel enhancement mode MOS transistor produced by Philips Semiconductor. It features low threshold voltage, high-speed switching, and no secondary breakdown. It is widely used in power management, battery powered applications (such as cellular phones) and general purpose switches.
The document describes the Philips BSH299, a P-channel enhancement mode MOS transistor designed for high-speed switching and direct interface with C-MOS or TTL logic. It is packaged in a 6-lead SOT363 surface-mounted device (SMD) suitable for power management and battery-powered applications such as cellular phones.
The datasheet details the absolute maximum ratings, thermal characteristics, and electrical parameters including drain-source breakdown voltage, threshold voltage, and switching times. It also includes typical characteristic curves for capacitance, output, transfer, and temperature coefficients.
| Package type | SOT363 |
|---|
The device has a maximum total power dissipation of 0.7 W when the temperature at the soldering point is 80 °C.
The transistor can withstand a maximum drain-source voltage of 50 V under DC conditions.