Philips BSH207 P-channel MOS Transistor Product Specification

The BSH207 is a P-channel enhancement mode MOS transistor with very low threshold voltage and fast switching characteristics, making it ideal for battery powered applications and high-speed digital interfacing.

Brand: Philips
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 7
File format: PDF
File size: 157 KB
Published: 09 July, 2012
Updated: 29 September, 2023
MD5 checksum: 7A62E79B3929A8822FA030B18CEFDF04
PDF: Philips BSH207 P-channel MOS Transistor Product Specification PDF

About this manual

This document is a product specification datasheet for the Philips BSH207, a P-channel enhancement mode MOS transistor. The device features very low threshold voltage and extremely fast switching, making it ideal for battery-powered applications and high-speed digital interfacing. It is supplied in a subminiature surface-mount SOT457 package.

What's inside

Features
General Description
Limiting Values
Electrical Characteristics
Reverse Diode Limiting Values
Thermal Resistances
Mechanical Data

Specifications

Storage & operating temperature range	-55 to 150 °C
Package type	SOT457

Frequently asked questions

Is the device logic level compatible?

Yes, the BSH207 is a logic level compatible field-effect power transistor.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is -1.52 A at 25°C.

What is the maximum total power dissipation at 25°C?

The maximum total power dissipation is 0.417 W at 25°C.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

Download PDF (157 KB)