The document introduces three models of OptiMOS®2 power transistors: IPB03N03LA, IPI03N03LA, and IPP03N03LA. These transistors are ideal for high-frequency dc/dc converters and have excellent gate charge and on-resistance, as well as superior thermal resistance. They have an operating temperature of 175°C and are rated for reverse diode dv/dt. The document also provides parameter and package information for each model.
This document is a product summary and technical specification sheet for the Infineon IPB03N03LA, IPI03N03LA, and IPP03N03LA OptiMOS power transistors. These N-channel logic-level devices are designed for high-frequency DC/DC converter applications and feature very low on-resistance (Rds(on)) and superior thermal resistance.
| Continuous drain current (Tc=25 °C) | 80 A |
|---|---|
| Operating temperature range | -55 ...175 °C |
| Power dissipation (Tc=25 °C) | 150 W |
| Thermal resistance junction-case | 1 KW |
The device supports a continuous drain current of up to 80 A at an ambient temperature of 25 °C.
This power transistor can operate with a maximum junction temperature of 175 °C.
The component is rated for an avalanche energy of 960 mJ under specific test conditions.