The IPB04N03LA is a N-channel power MOSFET from Infineon that features high-frequency dc/dc converters, logic level, very low on-resistance, excellent thermal resistance, etc.
This document provides technical specifications for the Infineon IPB04N03LA, IPI04N03LA, and IPP04N03LA OptiMOS power transistors. Key features include a maximum continuous drain current of 80 A, a drain-source breakdown voltage of 25 V, and a very low on-resistance. The devices are designed for high-frequency DC/DC converters and feature logic-level gate drive compatibility.
| Continuous drain current | 80 A |
|---|---|
| Drain-source breakdown voltage | 25 V |
| Operating temperature | -55 ... 175 °C |
| Thermal resistance, junction-case | 1.4 K/W |
| Gate threshold voltage | 1.2 V to 2 V |
The maximum continuous drain current is 80 A when the case temperature is 25 °C.
The device can operate at temperatures up to 175 °C.
The maximum power dissipation is 107 W at a case temperature of 25 °C.