This document describes the features and characteristics of the 1PS76SB21 Schottky barrier diode, including ultra fast switching speed, low forward voltage, guard ring protection, and very small plastic SMD package.
This document is a product specification data sheet for the Philips 1PS76SB21 Schottky barrier diode. It describes a planar Schottky barrier diode encapsulated in a very small plastic SOD323 surface-mount device (SMD) package. Key features include ultra-fast switching speed, low forward voltage, and guard ring protection.
| Continuous reverse voltage (VR) | - 40 V |
|---|---|
| Continuous forward current (IF) | - 200 mA |
| Non-repetitive peak forward current (IFSM) | - 1A |
| Storage temperature (Tstg) | -65+150 °C |
| Junction temperature (Tj) | - 125 °C |
| Forward voltage at IF=10mA | - 300 mV |
| Forward voltage at IF=100mA | - 420 mV |
| Reverse current at VR=30V, Tj=25°C | - 15 µA |
| Diode capacitance at f=1MHz, VR=0V | 40 50 pF |
| Thermal resistance junction-to-ambient (Rth j-a) | 450 K/W |
The device can handle a continuous forward current of up to 200 mA.
This diode can be stored between -65 and +150 degrees Celsius.
The continuous reverse voltage limit for this part is 40 V.