This data sheet is about the product specification of 1PS79SB62 Schottky barrier diode, which has ultra high switching speed, very low capacitance, high breakdown voltage, guard ring protected, ultra small plastic SMD package. Applications for ultra high-speed switching and high frequency applications.
This document is a product specification datasheet for the Philips 1PS79SB62 Schottky barrier diode. The device is an epitaxial Schottky barrier diode encapsulated in an ultra-small plastic SOD523 (SC-79) surface-mount package. Key features include ultra-high switching speed, very low capacitance, and high breakdown voltage, making it suitable for ultra-high-speed switching and high-frequency applications.
| Continuous reverse voltage | 40 V |
|---|---|
| Continuous forward current | 20 mA |
| Storage temperature | -65 +150 °C |
| Junction temperature | 125 °C |
| Operating ambient temperature | -65 +125 °C |
| Forward voltage | 800 mV |
| Reverse current | 1 uA |
| Diode capacitance | 0.6 pF |
| Thermal resistance (junction to ambient) | 450 K/W |
The device is encapsulated in an ultra-small plastic SOD523 (SC-79) surface-mount package.
It is designed for ultra-high-speed switching and high-frequency applications.
The marking code for the device is S9.