This document describes the features and characteristics of the 1PS89SB74 Schottky barrier double diode, including low forward voltage, high breakdown voltage, guard ring protection, ultra small plastic SMD package, and low capacitance. It is suitable for ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.
The Philips 1PS89SB74 is a Schottky barrier double diode designed for ultra-high-speed switching, voltage clamping, protection circuits, and blocking diode applications. It features a low forward voltage, high breakdown voltage, and is housed in an ultra-small plastic SMD package (SOT490/SC-89). The device includes a guard ring for protection and offers low capacitance.
| Continuous reverse voltage | 70 V |
|---|---|
| Continuous forward current | 70 mA |
| Non-repetitive peak forward current | 100 mA |
| Total power dissipation | 200 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | +150 °C |
| Continuous forward voltage (IF=1mA) | 410 mV |
| Continuous reverse current (Vr=70V) | 10 uA |
| Diode capacitance | 2 pF |
| Thermal resistance (junction to ambient) | 500 K/W |
The device is suitable for ultra-high-speed switching, voltage clamping, protection circuits, and blocking diodes.
The maximum continuous reverse voltage is 70 V.