1PS79SB10 is a Schottky barrier diode produced by Philips Semiconductors. Its features are low forward voltage, guard ring protection, and ultra-small plastic SMD package. It can be applied to ultra-high-speed switching, voltage clamping, protection circuits, blocking diodes, etc.
This document is a product specification datasheet for the Philips 1PS79SB10, a planar Schottky barrier diode. The device is encapsulated in an ultra-small plastic SMD package (SC-79) and features a guard ring for protection. It is designed for applications requiring low forward voltage and speed switching, such as voltage clamping, protection circuits, and blocking diodes.
| Continuous reverse voltage | 30 V |
|---|---|
| Continuous forward current | 200 mA |
| Repetitive peak forward current | 300 mA |
| Non-repetitive peak forward current | 600 mA |
| Storage temperature | -65 +150 °C |
| Junction temperature | 125 °C |
| Operating ambient temperature | -65 +125 °C |
| Diode capacitance | 10 pF |
| Thermal resistance (junction to ambient) | 450 K/W |
The maximum continuous reverse voltage is 30 V.
The maximum continuous forward current is 200 mA.
The maximum junction temperature is 125 °C.