This document provides preliminary specifications for the 1PS89SB14, 1PS89SB15, and 1PS89SB16 Schottky barrier double diodes released on November 10, 1998. These diodes have features such as power dissipation comparable to SOT23, low forward voltage, guard ring protection, and ultra small SMD package. They are suitable for applications including ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes. The diodes are encapsulated in an ultra small plastic SMD SC-89 (SOT490) package.
This datasheet provides preliminary specifications for the Philips 1PS89SB series of Schottky barrier double diodes. The devices are encapsulated in an ultra-small plastic SMD SC-89 (SOT490) package, offering power dissipation comparable to SOT23 packages with a guard ring protected design.
Key features include low forward voltage and suitability for applications such as ultra-high speed switching, voltage clamping, protection circuits, and blocking diodes. The document details electrical characteristics, thermal resistance, pin configurations, and graphical data regarding forward current, reverse current, and capacitance.
| Continuous reverse voltage (VR) | -30 V |
|---|---|
| Continuous forward current (IF) | -200 mA |
| Repetitive peak forward current (IFRM) | -300 mA |
| Non-repetitive peak forward current (IFSM) | -600 mA |
| Total power dissipation (Ptot) | -200 mW |
| Forward voltage at 100 mA | 800 mV |
| Thermal resistance junction-to-ambient (Rth j-a) | 500 K/W |
The devices are encapsulated in an ultra small plastic SMD SC-89 (SOT490) package.
They are intended for ultra high speed switching, voltage clamping, protection circuits, and blocking diodes.
The storage temperature range is from -65°C to +150°C.