BCW60 series NPN general purpose transistors data sheet
The document is a product specification datasheet for the BCW60 series of NPN general purpose transistors manufactured by Philips Semiconductors. These devices are designed for low current (max. 100 mA) and low voltage (max. 32 V) applications, suitable for general purpose switching and amplification. The transistors are housed in a plastic SOT23 surface-mounted package with three leads.
| Collector current (DC) | 100 mA |
|---|---|
| Peak collector current | 200 mA |
| Collector-base voltage | 32 V |
| Collector-emitter voltage | 32 V |
| Emitter-base voltage | 5 V |
| Total power dissipation | 250 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 150 °C |
| Transition frequency | 100 to 250 MHz |
The transistors are intended for general purpose switching and amplification.
The maximum DC collector current is 100 mA, with a peak collector current of 200 mA.
The maximum collector-emitter voltage (VcEo) is 32 V.
The transistors are available in a plastic SOT23 surface mounted package.