1PS79SB40 is a Schottky barrier diode produced by Philips Semiconductors. It has low forward voltage, ultra-small package, low capacitance, etc. It is suitable for ultra-high-speed switching, voltage clamping, protection circuits and other applications.
This document is a product specification datasheet for the Philips 1PS79SB40 Schottky barrier diode. The device is a planar Schottky barrier diode encapsulated in an SC-79 (SOD523) ultra-small surface-mount package with a guard ring for protection. It is designed for applications requiring ultra-high-speed switching, voltage clamping, protection circuits, and as blocking diodes.
| Continuous reverse voltage | 40 V |
|---|---|
| Continuous forward current | 120 mA |
| Repetitive peak forward current | 120 mA |
| Non-repetitive peak forward current | 200 mA |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 150 °C |
| Diode capacitance | 5 pF |
| Thermal resistance (junction to ambient) | 450 K/W |
The maximum continuous reverse voltage is 40 V.
The storage temperature ranges from -65 to +150 °C.