This document describes the features and characteristics of the 1PS76SB62 Schottky barrier diode, including ultra high switching speed, very low capacitance, high breakdown voltage, guard ring protection, and small SMD package. The diode is suitable for ultra high-speed switching and high frequency applications.
The document is a product specification for the Philips 1PS76SB62 Schottky barrier diode. It highlights features such as ultra-high switching speed, very low capacitance, and high breakdown voltage. The device is designed for ultra-high-speed switching and high-frequency applications.
| Continuous reverse voltage | 40 V |
|---|---|
| Continuous forward current | 20 mA |
| Storage temperature | -65 +150 °C |
| Junction temperature | 125 °C |
| Forward voltage | 800 mV |
| Reverse current | 1 uA |
| Diode capacitance | 0.6 pF |
| Thermal resistance | 450 K/W |
The device can withstand a continuous reverse voltage of up to 40 V.
The diode is rated for a continuous forward current of 20 mA.
The component can operate in ambient temperatures ranging from -65 to +125 °C.