The 1PS76SB10 is a low-voltage Schottky diode from Philips Semiconductors, packaged in a SOD323, with features of low forward voltage and guard ring protection. It is used in ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.
This document is a product specification datasheet for the Philips 1PS76SB10 Schottky barrier diode. It describes the device as a planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package, featuring low forward voltage and guard ring protection.
The datasheet provides comprehensive technical data including limiting values for reverse voltage (up to 30 V) and forward current. It details electrical characteristics such as forward voltage drop at various currents and diode capacitance, along with thermal resistance from junction to ambient.
| Storage temperature (Tstg) | -65 to +150 °C |
|---|---|
| Operating ambient temperature (Tamb) | -65 to +125 °C |
| Forward voltage at IrF= 1mA | 820 mV |
The device is encapsulated in a SOD323 very small plastic SMD package.
It is suitable for ultra high-speed switching, voltage clamping, protection circuits, and blocking diodes.