BAT 15-099 is a silicon dual Schottky diode with low noise figure, suitable for DBS mixer applications with frequencies up to 12 GHz.
The document is a datasheet for the Infineon BAT 15-099, a silicon dual Schottky diode designed for DBS mixer applications up to 12 GHz. Key features include a low noise figure and a low barrier type construction. The device is electrostatic discharge (ESD) sensitive and requires careful handling precautions.
The datasheet provides maximum ratings, operating temperature ranges, and detailed electrical characteristics. It includes DC parameters such as breakdown voltage and forward voltage, as well as AC characteristics like diode capacitance and forward resistance. Graphical data illustrates the relationship between forward current, reverse current, and temperature, along with typical impedance characteristics under external bias.
| Diode reverse voltage | 4 V |
|---|---|
| Forward current | 110 mA |
| Total power dissipation | 100 mW |
| Operating temperature range | -55 ... 150 °C |
| Forward voltage matching | 20 mV |
| Diode capacitance | 0.35 pF |
The operating temperature range is from -55 to 150 °C.
The maximum forward current is 110 mA.
The total power dissipation is 100 mW when the temperature is below 55 °C.
The diode capacitance is 0.35 pF when VR is 0V and frequency is 1 MHz.