The data sheet mainly introduces the data information of BAT 15-04W, including maximum ratings, electrical characteristics, etc.
This document is a preliminary data sheet for the Infineon BAT 15-04W Silicon Schottky Diode. It is designed for DBS mixer applications up to 12 GHz and features a low noise figure and low barrier type. The device is available in an SOT-323 package with pin configuration 1=Al, 2=C2, 3=C1/A2.
| Diode reverse voltage | 4 V |
|---|---|
| Forward current | 110 mA |
| Junction temperature | 150 °C |
| Operating temperature range | -55 ... 150 °C |
| Breakdown voltage | 4 V |
| Forward voltage (Ip=1mA) | 0.23 V |
| Forward voltage (Ip=10mA) | 0.4 V |
| Diode capacitance | 0.35 pF |
| Forward resistance | 5.5 Q |
The operating temperature range is from -55 to 150 °C.
The maximum forward current is 110 mA.
The breakdown voltage is 4 V.