BAT 15-03W is a silicon Schottky diode produced by Texas Instruments (TI). This diode has low noise characteristics and can be used for DBS mixer applications. The maximum reverse voltage is 4V, the maximum forward current is 100mA, the rated power is 100mW, and the working temperature range is -55°C to 150°C. The storage temperature range is -55°C to 150°C
The document is a datasheet for the Infineon BAT 15-03W, a Silicon Schottky Diode designed for DBS mixer applications up to 12 GHz. Key features include a low noise figure and a low barrier type construction. The device is available in a Piwhite package with a SOD-323 pin configuration (Pin 1=Cc, 2=A).
| Diode reverse voltage | 4 V |
|---|---|
| Forward current | 100 mA |
| Total power dissipation | 100 mW |
| Junction temperature | 150 °C |
| Operating temperature range | -55 ... 150 °C |
| Breakdown voltage | 4 V |
| Forward voltage (Ip=1mA) | 0.23 V |
| Forward voltage (Ip=10mA) | 0.32 V |
| Diode capacitance | 0.35 pF |
| Forward resistance | 55 1Q |
The maximum ratings are a reverse voltage of 4 V, forward current of 100 mA, and total power dissipation of 100 mW at 70 °C.
The operating temperature range is from -55 °C to 150 °C.
The typical forward voltage is 0.32 V when the current is 10mA.