Infineon BAT 14-077D Dual Schottky Diode Datasheet

BAT 14-077D is a silicon dual flip chip Schottky diode produced by GaAs Components. This diode has medium barrier mixer diode characteristics and is suitable for W-band applications up to 80 GHz.

Brand: Infineon
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 3
File format: PDF
File size: 90 KB
Published: 09 July, 2012
Updated: 30 September, 2023
MD5 checksum: D38B6840046895811C42BC0DDFB29D92
PDF: Infineon BAT 14-077D Dual Schottky Diode Datasheet PDF

About this manual

This document is a preliminary datasheet for the Infineon BAT 14-077D, a silicon dual flip chip Schottky diode. It is specifically designed for W-band applications with a frequency range up to 80 GHz. The device features a dual Schottky medium barrier mixer diode configuration.

What's inside

Maximum Ratings
Electrical Characteristics
DC Characteristics
AC Characteristics
Chip Layout
Package Information

Specifications

Reverse Voltage	3 V
Forward Current	25 mA
Junction Temperature	150 °C
Operating Temperature Range	-40...+150 °C
Breakdown Voltage	3 V
Forward Voltage	0.4 V (typ)
Diode Capacitance	30 fF
Forward Resistance	7 Ohm (typ)

Frequently asked questions

What is the maximum forward current for the BAT 14-077D diode?

The maximum forward current is 25 mA.

What is the maximum operating temperature range for this device?

The device operates between -40 and +150 degrees Celsius.

What is the maximum total power dissipation at 25 degrees Celsius?

The maximum total power dissipation is 20 mW.

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