This document is a datasheet for the BAT 14-077S Silicon Single Flip Chip Schottky Diode. The diode is suitable for W-band applications up to 80 GHz. It is an electrostatic discharge sensitive device and requires handling precautions.
This document is a preliminary datasheet for the Infineon Technologies BAT 14-077S, a silicon single flip chip Schottky diode. It is specifically designed as a single Schottky medium barrier mixer diode intended for W-band applications up to 80 GHz.
The sheet provides maximum ratings and electrical characteristics including DC parameters such as breakdown voltage and forward voltage, as well as AC characteristics like diode capacitance and forward resistance. It also includes chip layout details with gold-bump dimensions and packaging information references.
| Product Type | Silicon Single Flip Chip Schottky Diode |
|---|---|
| Application | Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz |
| Diode reverse voltage Va | 3 Vv |
| Forward current Ie | 25 mA |
| Total power dissipation Prot (Ts = 25 °C) | 20 mw |
| Junction temperature Tj | 150 °C |
| Operating temperature range Tp | -40...+150 |°C |
| Breakdown voltage Viga) | 3 - - Vv |
| Forward voltage Ve (Ip = 100 uA) | - 0.4 0.5 Vv |
| Diode capacitance C, (Va=0V) | - 30 - {F |
| Forward resistance R- (Ip=10mA) | - 7 10 Q |
The device operates within a temperature range of -40 to +150 degrees Celsius.
The maximum forward current is 25 mA.
The gold bumps have a height of 25 micrometers.