Infineon BAT 14-099R Silicon Crossover Ring Quad Schottky Diode Datasheet

BAT 14-099R is a silicon crossover ring quad Schottky diode, suitable for applications such as double balanced mixers, phase detectors, and modulators. It has a medium barrier characteristic.


Infineon BAT 14-099R Silicon Crossover Ring Quad Schottky Diode Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
70 KB
Published
09 July, 2012
Updated
29 September, 2023
MD5 checksum
858587C879B9E3E19A39C10A72C0F92F

About this manual

This document is a datasheet for the Infineon Technologies BAT 14-099R, which is described as a Silicon Crossover Ring Quad Schottky Diode. It features a medium barrier design intended for use in double balanced mixers, phase detectors, and modulators.

The device is housed in an SOT-143 package with four pins configured as A1/C4, C2/A3, C1/AZ, and C3/A4. Key maximum ratings include a forward current of 90 mA and an operating temperature range from -55 to 150 °C.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Resistance
  • Package Marking
  • Pins Configuration

Specifications

Forward current (ip)90 mA
Total power dissipation100 mW
Junction temperature (Tj)150 °C
Operating temperature range (Top)-55 ... 150 °C
Forward voltage (Ve) at If=1mA0.4 V min.

Frequently asked questions

What is the BAT 14-099R used for?

It is a medium barrier diode intended for use in double balanced mixers, phase detectors, and modulators.

What is the maximum forward current?

The maximum forward current is 90 mA.

What is the maximum total power dissipation?

The maximum total power dissipation is 100 mW when the temperature is below 70 °C.

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