This document describes the features and characteristics of the BAT 14-03W silicon Schottky diode, including its applications, low noise figure, and maximum ratings.
This document is a technical datasheet for the Infineon Technologies BAT 14-03W, a Silicon Schottky Diode designed specifically for DBS (Direct Broadcast Satellite) mixer applications operating up to 12 GHz. The device features low noise figure and low barrier type characteristics.
| Diode reverse voltage (VR) | 4 V |
|---|---|
| Forward current (Ir) | 90 mA |
| Total power dissipation (Tg < 85 °C) | 100 mW |
| Junction temperature | 150 °C |
| Operating temperature range (Top) | -55 ... 125 °C |
| Breakdown voltage (VBR) | 4 V |
| Forward voltage at Ip=1mA | 0.36 ... 0.52 V |
| Diode capacitance (Cr) | 0.22 ... 0.35 pF |
The maximum reverse voltage rating is 4 V.
The device operates from -55 °C to 125 °C.
The maximum forward current is 90 mA.