This document is a datasheet for the YPTOS BFQ 69, an NPN silicon RF transistor intended for use in low-noise broadband amplifiers within antenna and telecommunications systems. The device operates at collector currents ranging from 1 mA to 25 mA and is housed in a T-plast package. It is noted as an electrostatic discharge sensitive device requiring careful handling.
The datasheet provides detailed maximum ratings, including a collector-emitter voltage of 15 V and a total power dissipation of 300 mW. It also lists specific electrical characteristics such as DC current gain (hFE) between 50 and 250, a transition frequency (ft) of 2 GHz, and noise figure specifications at various frequencies.
| Collector current | 30 mA |
|---|---|
| Total power dissipation | 300 mW |
| Junction temperature | 150 C |
It is designed for low-noise broadband amplifiers in antenna and telecommunications systems.
The device operates at collector currents from 1 mA to 25 mA.
Yes, it is an electrostatic discharge sensitive device and handling precautions must be observed.