This document is a datasheet for the Siemens BFQ 75, a PNP silicon RF transistor intended for use in broadband amplifiers operating up to 2 GHz. The device is designed to operate at collector currents ranging from 5 mA to 30 mA. A complementary NPN type, the BFQ 72, is also mentioned.
The datasheet provides maximum ratings, including a collector-emitter voltage of 12 V and a total power dissipation of 350 mW. It details electrical characteristics such as DC current gain, transition frequency, and various capacitance values at 25 °C. Graphs illustrating the relationship between power dissipation and temperature, as well as transition frequency and collector current, are included.
| Collector-emitter voltage (Vceo) | 12 V |
|---|---|
| Collector current (Ic) | 50 mA |
| Total power dissipation (Prot) | 350 mw |
| Junction temperature (Tj) | 175 Cc |
| Transition frequency (ft) | 500 MHz |
| DC current gain (Are) | 20 to 50 |
The maximum collector-emitter voltage (Vceo) is 12 V.
The device is designed for broadband amplifiers at collector currents from 5 mA to 30 mA.
The complementary type is the BFQ 72, which is an NPN transistor.