BFQ 81 is an NPN Silicon RF transistor suitable for low-noise amplifiers up to 2GHz and broadband analog and digital applications. It operates at collector currents ranging from 0.5mA to 20mA.
This document is a technical datasheet for the Siemens BFQ 81, an NPN silicon RF transistor designed for low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems. The device operates at collector currents ranging from 0.5 mA to 20 mA and is housed in a SOT-23 package.
The datasheet provides comprehensive electrical characteristics, including DC parameters such as current gain and cutoff currents, as well as AC characteristics like transition frequency, noise figure, and power gain at frequencies of 900 MHz and 1.8 GHz. It also includes SPICE model parameters for circuit simulation and graphs illustrating power dissipation and gain versus current and voltage.
| Collector-emitter voltage (VcEO) | 16 V |
|---|---|
| Collector current (Ic) | 30 mA |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fr) | 5.8 GHz |
| Noise figure (F) at 900 MHz | 1.45 dB |
| Power gain (Gma) at 900 MHz | 16 dB |
| Package type | SOT-23 |
It is designed for low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems.
The transistor operates at collector currents from 0.5 mA to 20 mA.
The maximum junction temperature is 150 °C.