BFQ 82 is an NPN silicon RF transistor suitable for low-noise, high-gain amplifiers up to 2 GHz. It features linear broadband applications and a hermetically sealed ceramic package.
This document is a technical datasheet for the Siemens BFQ 82, an NPN silicon RF transistor designed for low-noise, high-gain amplifiers operating up to 2 GHz. The device features a hermetically sealed ceramic package (Cerec-X) and is suitable for linear broadband applications with collector currents up to 40 mA.
| Collector-emitter voltage (Vceo) | 12 V |
|---|---|
| Collector current (Ic) | 80 mA |
| Total power dissipation (Prot) | 500 mW |
| Junction temperature (Tj) | 175 C |
| Transition frequency (ft) @ Ic=30mA, Vee=8V | 2 GHz |
| Noise figure (F) @ Ic=5mA, Vee=8V, f=10 MHz | 0.7 dB |
| Third order intercept point (IP3) | 32 dBm |
The maximum collector-emitter voltage (Vceo) is 12 V.
The device is specified for low-noise, high-gain amplifiers up to 2 GHz.
It uses a hermetically sealed ceramic package (Cerec-X).