This document introduces a semiconductor device - Silicon Dual Schottky Diode BAT 114-099. The device features a high barrier diode, suitable for applications such as balanced mixers, phase detectors, and modulators.
This document is a datasheet for the Siemens BAT 114-099, a silicon dual Schottky diode designed for use in balanced mixers, phase detectors, and modulators. The device is housed in a SOT-143 package and is noted as being sensitive to electrostatic discharge (ESD).
The datasheet provides comprehensive technical specifications including maximum ratings for reverse voltage, forward current, and operating temperatures. It also lists electrical characteristics such as breakdown voltage, forward voltage, and diode capacitance, along with thermal resistance values for junction-to-soldering point and junction-to-ambient conditions.
| Reverse voltage | 4 V |
|---|---|
| Forward current | 90 mA |
| Operation temperature | - 55 to + 150 °C |
| Storage temperature | - 55 to + 150 °C |
| Power dissipation | 100 mw |
| Junction to soldering point thermal resistance | < 780 K/W |
| Junction to ambient thermal resistance | < 1020 K/W |
| Package | SOT-143 |
The maximum forward current per diode is 90 mA.
The device operates between -55 and +150 °C.
The maximum power dissipation is 100 mW.