The document is a technical datasheet for the Siemens BFQ 74, an NPN Silicon RF Transistor. It is intended for use in low-noise amplifiers within the GHz range and for broadband analog and digital applications in telecommunications systems operating at collector currents from 1 mA to 25 mA.
| Collector-emitter voltage (Vceo) | 16 V |
|---|---|
| Collector current (Ic) | 35 mA |
| Total power dissipation (Prot) | 300 mW |
| Junction temperature (Tj) | 175 C |
| Transition frequency (ft) at Ic=5mA, Vce=10V, f=200MHz | -4.4 GHz |
The maximum collector current is 35 mA.
The maximum total power dissipation is 300 mW.
The minimum collector-emitter breakdown voltage is 16 V.