This document is a technical datasheet for the Siemens BFQ 71, an NPN silicon RF transistor designed for broadband amplifiers operating up to 2 GHz and fast non-saturated switches. The device features a hermetically sealed ceramic package and is available with HiRel/Mil screening or CECC-type certification (CECC 50002/260).
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a collector-emitter voltage of 15 V and a total power dissipation of 300 mW. It details DC parameters like current gain and saturation voltages, as well as AC performance metrics including transition frequency, capacitance values, noise figure, and power gain across various frequencies from 800 MHz to 2 GHz.
| Collector-emitter voltage (Vceo) | 15 V |
|---|---|
| Total power dissipation (Prot) | 300 mw |
| Junction temperature (Tj) | 175 Cc |
| Transition frequency at Ic=20mA, f=200MHz | 4.2 GHz (typ) |
| Collector-base capacitance | 0.46 pF (typ) |
It is designed for broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.
The maximum total power dissipation is 300 mW when the temperature is below 103 °C.
The device supports a base current of up to 4 mA and a total power dissipation of 300 mW.