The Siemens BFQ 73S is an NPN silicon RF transistor housed in a hermetically sealed ceramic package. It is specifically designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems operating up to 2 GHz at collector currents ranging from 10 mA to 70 mA.
The document provides comprehensive electrical characteristics, including DC parameters such as current gain and breakdown voltages, as well as AC characteristics like transition frequency and noise figures. It also details common emitter noise parameters, power gain curves across various frequencies, and S-parameters for different collector currents.
| Collector-base voltage | 20 V |
|---|---|
| Emitter-base voltage | 3 V |
| Collector current | 100 mA |
| Total power dissipation | 500 mW |
| Junction temperature | 175 °C |
| Transition frequency | 5.3 GHz |
| Noise figure | 0.9 dB |
The transistor is designed for systems up to 2 GHz.
The device operates at collector currents from 10 mA to 70 mA.
It uses a hermetically sealed ceramic package.