The BAT 114-099R is a silicon Schottky diode produced by the semiconductor company. Its maximum rating is IF = 90 mA, the operating temperature range is -55 to +150 °C, the storage temperature range is -55 to +150 °C, and the power dissipation is 100 mW. This diode has a high blocking voltage and is suitable for use in double balanced mixers, phase detectors and modulators.
The document is a technical datasheet for the Siemens BAT 114-099R, a Silicon Crossover Ring Quad Schottky Diode. It is designed for use in high barrier diode applications such as double balanced mixers, phase detectors, and modulators. The device is housed in a SOT-143 package and is noted as being sensitive to electrostatic discharge (ESD).
The datasheet details the maximum ratings, including a forward current of 90 mA and an operation temperature range of -55 to +150 °C. It also lists specific electrical characteristics such as forward voltage, diode capacitance, and forward resistance, along with thermal resistance values for junction-to-soldering point and junction-to-ambient measurements.
| Forward current | 90 mA |
|---|---|
| Operation temperature | -55 to +150 °C |
| Storage temperature | -55 to +150 °C |
| Power dissipation | 100 mW |
| Forward voltage (typical) | 0.7 V |
| Package type | SOT-143 |
The maximum forward current is 90 mA.
The device operates between -55 and +150 °C.
The maximum power dissipation is 100 mW.