This document is a technical datasheet for the Siemens BFQ 70, an NPN silicon RF transistor designed for low-noise intermediate frequency (IF) and broadband amplifiers. It is intended for use in antenna and telecommunications systems operating at collector currents between 2 mA and 20 mA. The device is available in a hermetically sealed ceramic package and may be screened to HiRel/Mil standards.
The datasheet provides comprehensive electrical specifications, including maximum ratings, DC characteristics, and AC characteristics such as transition frequency and noise figure. It also includes detailed graphs for power gain, noise figure, and S-parameters across various frequencies and operating conditions.
| Collector current (Ic) | 35 mA |
|---|---|
| Total power dissipation (Prot) | 300 mW |
| Junction temperature (Tj) | 175 °C |
| Transition frequency (ft) | 5 GHz |
| Noise figure (F) | 0.9 dB |
It is designed for low-noise IF and broadband amplifiers in antenna and telecommunications systems.
The device is specified for collector currents from 2 mA to 20 mA.
Yes, HiRel/Mil screening is available for this transistor.