BFQ68 is a NPN transistor with a wideband of 4 GHz and very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers and is also suitable for use in low power band IV and V equipment.
The Philips BFQ68 is an NPN transistor designed as a four-lead dual-emitter device with a ceramic cap. It features diffused emitter-ballasting resistors and gold sandwich metallization to ensure excellent reliability and high output voltage capabilities.
This component is primarily intended for use in final stages of MATV system amplifiers but is also suitable for low power band IV and V equipment. The datasheet provides detailed electrical characteristics, limiting values, thermal resistance data, and package dimensions.
| Collector-emitter voltage (VcEo) | 18 V |
|---|---|
| Collector current (Io) | 300 mA |
| Total power dissipation (Prot) | 4.5 W |
| Transition frequency (fr) | 4 GHz |
| Output voltage (Vo) | 1.6 V |
| Package type | SOT122A |
It is primarily intended for final stages in MATV system amplifiers and is also suitable for use in low power band IV and V equipment.
The maximum collector-emitter voltage is 18 V and the total power dissipation up to 110 °C is 4.5 W.