BFQ67T is an NPN 8 GHz wideband transistor from Philips Semiconductors. It features high power gain, low noise figure, high transition frequency and gold metallization package. It is used in wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz.
This document is a product specification datasheet for the Philips BFQ67T, an NPN transistor designed for wideband applications such as satellite TV tuners and RF portable communications up to 2 GHz. The device features high power gain, low noise figure, and high transition frequency, housed in a plastic SOT416 (SC-75) envelope with gold metallization for reliability.
The datasheet provides quick reference data including electrical characteristics like collector-base voltage, current gain, and noise figure. It also details thermal characteristics, limiting values according to the Absolute Maximum System, and includes graphical representations of DC current gain, power derating curves, capacitance versus voltage, transition frequency, and various S-parameters (gain, reflection coefficients) across different frequencies and operating conditions.
| Package type | SOT416 (SC-75) |
|---|---|
| Collector-base voltage (Vcbo) | 20 V |
| Collector-emitter voltage (Vceo) | 10 V |
| Collector current (Ic) | 50 mA |
| Total power dissipation (Prot) | 150 mW |
| Transition frequency (fT) | 8 GHz |
| Maximum unilateral power gain (Gum) | 13 dB |
| Noise figure (F) | 1.3 dB |
The maximum total power dissipation is 150 mW when the soldering point temperature is less than 75 °C.
The maximum collector-emitter voltage is 10 V when the base is open.
The maximum DC current gain is 100 when the collector current is 15 mA and the collector-emitter voltage is 5 V.