This document provides technical specifications for the BFQ 64, an NPN silicon RF transistor intended for low-distortion broadband amplifiers in antenna and telecommunications systems. It operates at collector currents ranging from 70 mA to 150 mA.
| Collector-emitter voltage | 20 V |
|---|---|
| Collector current | 200 mA |
| Total power dissipation | 1 W |
| Junction temperature | 150 C |
| Transition frequency | 3 GHz |
It is designed for low-distortion broadband amplifiers in antenna and telecommunications systems.
The maximum collector-emitter voltage is 20 V.
The maximum total power dissipation is 1 W when the ambient temperature is below 25 °C.