The BFQ621 is a Philips NPN type 7GHz wideband transistor with high power gain, high output voltage and high maximum junction temperature. It is mainly used in MATV and microwave amplifiers.
The document is a product specification sheet for the BFQ621, a Silicon NPN transistor packaged in SOT172A2 with a ceramic cap. It features gold metallization to ensure excellent reliability and high maximum junction temperature capabilities.
Key electrical characteristics include a transition frequency of up to 7 GHz, a maximum unilateral power gain of 18.5 dB at 500 MHz, and an output voltage of 1.2 V. The device is intended for use in aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.
| Collector-emitter voltage (open base) | 16 V |
|---|---|
| Collector current (DC) | 150 mA |
| Total power dissipation | 8 W |
| DC current gain (typical) | 40 |
| Transition frequency | 7 GHz |
| Maximum unilateral power gain (typical) | 18.5 dB |
| Output voltage (typical) | 1.2 V |
The maximum total power dissipation is 8 W when the ambient temperature is up to 25 °C.
The maximum collector-emitter voltage is 16 V under open base conditions.