The Siemens BFQ 60 is a bipolar silicon NPN microwave transistor designed for use in low-noise broadband linear amplifiers up to 2 GHz. It features a hermetically sealed metal ceramic 100 mil package similar to TO 120 and utilizes state-of-the-art manufacturing processes including ion implantation and titanium-platinum-gold metallization to ensure high reliability.
The document provides detailed electrical specifications including maximum ratings such as a collector-emitter voltage of 27 V and a total power dissipation of 700 mW. It also lists static characteristics like DC current gain and dynamic characteristics including transition frequency and noise figure at various operating points.
| Collector current | 35 mA |
|---|---|
| Storage temperature range | -65 to +175 °C |
| Total power dissipation | 700 mw |
| Reverse transfer capacitance | 0.6 pF |
The transistor is intended for use up to 2 GHz.
The approximate weight is 0.06 g.
The storage temperature range is -65 to +175 °C.