BFQ591 is a NPN type 7 GHz wideband transistor manufactured by Philips. It has high power gain, low noise figure, high transition frequency and excellent reliability. It is intended for applications in the GHz range, such as MATV or CATV amplifiers and RF communications subscribers equipment.
This document is a product specification datasheet for the Philips BFQ591, an NPN wideband transistor designed for applications in the GHz range, such as MATV or CATV amplifiers and RF communications subscriber equipment. The device is housed in a SOT89 plastic package and features high power gain, low noise figure, and high transition frequency.
| Collector-emitter voltage (open base) | 15 V |
|---|---|
| Collector current (DC) | 200 mA |
| Total power dissipation | 2.25 W |
| DC current gain (typical) | 90 |
| Transition frequency (typical) | 7 GHz |
| Maximum unilateral power gain (typical) | 11 dB |
It is intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.
The BFQ591 is an NPN wideband transistor in a SOT89 plastic package.
The maximum junction temperature is 175 °C.