BFQ540 is an NPN wideband dual transistor from Philips Semiconductors, with high gain, high output voltage, low noise, gold metallization ensures excellent reliability, low thermal resistance. Applications for VHF, UHF and CATV amplifiers.
The document is a technical specification sheet for the Philips BFQ540, an NPN wideband dual transistor housed in a plastic SOT89 package. Key features include high gain, low noise performance, gold metallization for reliability, and low thermal resistance.
The device is intended for use in VHF, UHF, and CATV amplifiers. The datasheet details quick reference data such as collector-base voltage (20 V), collector-emitter voltage (15 V), maximum collector current (120 mA), and transition frequency up to 9 GHz.
| Collector-base voltage (open emitter) | 20 V |
|---|---|
| Collector-emitter voltage (Ree = 0) | 15 V |
| Emitter-base voltage (open collector) | 2 V |
| Collector current (DC) max | 120 mA |
| Total power dissipation | 1.2 W |
| DC current gain (typical) | 120 |
| Transition frequency (typical) | 9 GHz |
The maximum total power dissipation is 1.2 W when the temperature at the soldering point is less than 60 °C.
The maximum collector current is 120 mA.
The maximum operating junction temperature is 175 °C.