BFQ 29P is a NPN silicon RF transistor, with a maximum collector-emitter voltage of 15V, a maximum emitter-base voltage of 3V, a maximum collector current of 30mA, a maximum collector-base voltage of 20V, a maximum base current of 4mA, and a working temperature range of -65...+150℃. The package is SOT-23.
This document is a technical datasheet for the Siemens BFQ 29P, an NPN silicon RF transistor. It is specifically designed for use in low-noise intermediate frequency (IF) and broadband amplifiers operating at frequencies up to 1 GHz with collector currents ranging from 1 mA to 20 mA.
| Collector-base voltage (Vcbo) | 20 V |
|---|---|
| Emitter-base voltage (Vebo) | 3 V |
| Collector current (Ic) | 30 mA |
| Total power dissipation | 280 mW |
| Junction temperature (Tj) | 150 C |
| Transition frequency (ft) @ Ic=3mA, Vce=6V | 2.7 GHz |
| Transition frequency (ft) @ Ic=20mA, Vce=6V | 5 GHz |
| Noise figure (F) @ Ic=3mA, Vce=6V | 1.2 dB max |
It is designed for low-noise IF and broadband amplifiers up to 1 GHz.
The device operates at collector currents from 1 mA to 20 mA.
Yes, the CECC-type is designated as CECC 50002/258.