The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets.
The NEC NE5500179A is an N-channel silicon power MOS FET specifically designed as a transmission driver amplifier for 4.8 V GSM 1800 and GSM 1900 handsets. Manufactured using NEC's NEWMOS technology, the device is housed in a surface mount package and delivers 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under a 4.8 V supply voltage.
The document provides absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics including linear gain, output power, and power added efficiency. It also includes typical performance graphs for various frequencies and supply voltages, S-parameters, large signal impedance data, and package dimensions with recommended PCB layouts.
| Output Power (Typical) | 30.0 dBm |
|---|---|
| Power Added Efficiency (Typical) | 55% |
| Linear Gain (Typical) | 14.0 dB |
| Supply Voltage Range | 3.0 to 6.0 V |
| Drain to Source Voltage (Max) | 8.5 V |
| Drain Current (Max) | 0.25 A |
| Package Dimensions | 15.7 x 5.7 x 1.1 mm MAX. |
It is designed as the transmission driver amplifier for 4.8 V GSM 1800 and GSM 1900 handsets.
The typical operating current is 340 mA when the supply voltage is 4.8 V and the current set is 200 mA.
Yes, it can be used as a 3.5 V final stage amplifier for DECT digital cordless phones.