BLF548 is a UHF push-pull power MOS transistor produced by Philips company, which features high power gain, easy power control, good thermal stability, gold metallization ensures excellent reliability and broadband operation.
The document describes the BLF548 as a discrete semiconductor device featuring high power gain and good thermal stability. It is encapsulated in a 4-lead SOT262A2 balanced flange package with two ceramic caps, intended for broadband operation in the UHF frequency range.
Key electrical characteristics include a drain-source breakdown voltage of 65 V and a maximum total power dissipation of 330 W. The transistor is optimized for Class-B push-pull common source test circuits operating at frequencies up to 500 MHz with an output power of 150 W.
| Drain-source breakdown voltage (V(BR)DSS) | 65 V |
|---|---|
| Gate-source leakage current (IGSS) | 1 uA |
The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package with two ceramic caps.
The maximum junction temperature (Tj) for this device is 200 °C.