The BLF647 is a high power LDMOS transistor produced by Philips. It has high power gain, easy power control, excellent ruggedness, and a source on the underside that eliminates DC isolators and reduces common-mode inductance. It is designed for broadband operation (HF to 800 MHz).
The document is a product specification datasheet for the BLF647, a UHF power LDMOS transistor designed for communication transmitter applications in the HF to 800 MHz frequency range. It features a SOT540A package with a ceramic cap and is intended for broadband operation with excellent stability and ruggedness.
| Storage temperature | -65 to +150 °C |
|---|---|
| Junction temperature | 200 °C |
The transistor is designed for broadband operation in the HF to 800 MHz frequency range.
The maximum drain-source voltage is 65 V.
The maximum total power dissipation is 290 W.
The typical drain-source on-state resistance is 160 mΩ.