BLF547 is a UHF push-pull power MOS transistor produced by Philips. It has high power gain, easy power control, good thermal stability and excellent reliability.
The Philips BLF547 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. It features high power gain, easy power control, and good thermal stability, with gold metallization ensuring excellent reliability. The device is encapsulated in a 4-lead, SOT262A2 balanced flange envelope with two ceramic caps, providing a common source connection for the transistors via the mounting flange.
This datasheet provides comprehensive product specifications, including quick reference data for RF performance in a push-pull common-source test circuit, limiting values, and thermal resistance. It also details electrical characteristics such as breakdown voltage, leakage currents, threshold voltage, and capacitance values. Additionally, the document includes application information for Class-B operation, a list of components for the test circuit, and package outline dimensions.
| Drain-source voltage | 65 V |
|---|---|
| Gate-source voltage | 20 V |
| DC drain current | 9 A |
| Storage temperature | -65 to 150 °C |
| Junction temperature | 200 °C |
The device is encapsulated in a 4-lead, SOT262A2 balanced flange envelope with two ceramic caps.
Yes, the application information in the datasheet specifically details RF performance and test circuits for Class-B operation.