BLF900-110 and BLF900S-110 are two RF power amplifiers produced by Philips Semiconductors, suitable for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.
This document is a product specification datasheet for the BLF900-110 and BLF900S-110 Base Station LDMOS transistors manufactured by Philips Semiconductors. These devices are designed as 110 W power transistors for base station applications operating in the 800 to 1000 MHz frequency range, supporting GSM, EDGE, and CDMA multicarrier operations.
| Output power (CDMA IS95) | 24 W (AV) |
|---|---|
| Power gain | 15 dB |
| Efficiency | 27% |
| ACPR | -45 dBc |
| Operating frequency range | 800 to 1000 MHz |
The typical CDMA IS95 performance is achieved with a supply voltage of 27 V.
They are designed for broadband operation in the 800 to 1000 MHz frequency range.
The maximum junction temperature rating is 200 °C.