This is a BLF542 UHF power MOS transistor produced by Philips, which has the characteristics of high power gain, easy power control, gold metallization, good thermal stability, and can withstand full load mismatch
The document is a product specification datasheet for the Philips BLF542, an N-channel enhancement mode vertical D-MOS transistor. It is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap and is designed for large signal amplifier applications in the UHF frequency range.
The datasheet provides comprehensive technical data including quick reference performance figures (e.g., 500 MHz operation, >13 dB gain), limiting values such as a maximum drain-source voltage of 65V and power dissipation of 20W. It also details electrical characteristics like input/output capacitance, thermal resistance, and includes application information for Class-B operation with test circuit diagrams and component lists.
| Drain-source breakdown voltage (V(BR)DSS) | 65 V |
|---|---|
| DC drain current (ID) | 1.5 A |
| Total power dissipation (PD) | 20 W |
| Junction temperature (Tj) | -200 °C |
| Forward transconductance (gfs) | 160 mS to 240 mS |
| Input capacitance (Ciss) | 14 pF |
| Output capacitance (Coss) | 94 pF |
The transistor is designed for large signal amplifier applications in the UHF frequency range.
It can withstand a full load mismatch corresponding to VSWR = 50:1 through all phases under specific conditions.
It is a Silicon N-channel enhancement mode vertical D-MOS transistor.